The production of semiconductor burning laser pointer on silicon wafers is a long-term goal in the electronics industry, but the manufacturing process has proven to be challenging. Researchers at the A * STAR Institute have now developed a new manufacturing method that is cheap, simple and extensible.

Hybrid silicon lasers combine the luminescent properties of III-V semiconductors (such as gallium arsenide and indium phosphide) with mature silicon fabrication techniques. These lasers are of considerable concern because they can integrate photons and microelectronic components into a single silicon chip for low-cost, mass-produced optics. They have a wide range of application prospects, from short-range data communications to high-speed, long-distance optical transmission.

However, in the current production process, lasers are fabricated on separate III-V semiconductor wafers and then aligned individually with each silicon device - a time consuming and costly process that limits the number of 3000mw laser pointer on the chip. To overcome these limitations, Doris Keh-Ting Ng and colleagues from the A * STAR Data Storage Institute have developed an innovative method for producing optical microcapsules for mixed III-V semiconductors and silicon-on-insulator (SOI) insulators. This greatly reduces the complexity of the manufacturing process, making the device structure more compact.

"Etching the entire cavity is very challenging," Ng said. "At present, there is no single etch recipe and mask that allows etching in the entire microcavity, so we decided to develop a new method."

By first attaching a III-V semiconductor film to a silicon oxide (SiO2) wafer using a SOI interfacial thermal bonding process, they produce a strong bond that eliminates the need for an oxidant such as piranha etch fluid or hydrofluoric acid The And by using dual hard masking techniques to etch the microcavities of the desired layer, they eliminate the need to use multiple overlays for lithography and etch cycles - a challenging process.

Ng explained: "Our approach reduces the number of manufacturing steps, reduces the use of hazardous chemicals, and the entire process requires only one lithography step to complete." The work for the first time introduced a new heterogeneous core configuration and integration Manufacturing process, which will be low-temperature SiO2 layer bonding and dual hard mask, single-photolithography pattern together. "This process not only creates heterogeneous nuclear devices, but also greatly reduces the difficulty of manufacturing processes and can be used as another hybrid microcavity in the field of research."